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PBSS4160K - 1 A NPN low VCEsat (BISS) transistor

Description

NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package.

PNP complement: PBSS5160K.

Features

  • s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement of medium power transistor BCP55 and BCX55. 1.3.

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www.DataSheet4U.com PBSS4160K 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 29 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP complement: PBSS5160K. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement of medium power transistor BCP55 and BCX55. 1.3 Applications s Major application segments x Automotive 42 V power x Telecom infrastructure x Industrial s Power management x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications, e.g.
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