PBSS4160K
PBSS4160K is 1 A NPN low VCEsat (BISS) transistor manufactured by NXP Semiconductors.
description
NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP plement: PBSS5160K.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement of medium power transistor BCP55 and BCX55.
1.3 Applications s Major application segments x Automotive 42 V power x Tele infrastructure x Industrial s Power management x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications, e.g. lamps and LEDs x Inductive load driver, e.g. relays, buzzers and motors.
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max 60 1 2 280 Unit V A A mΩ
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Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector
Simplified outline
Symbol
3 1 2
1 Top view
2 sym021
3. Ordering information
Table 3: Type number PBSS4160K Ordering information Package Name Description plastic surface mounted package; 3 leads Version SOT346
4. Marking
Table 4: Marking Marking code [1]
- XB Type number PBSS4160K
[1]
- = t: made in Malaysia.
9397 750 12702
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01
- 29 April 2004
2 of 12
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Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current t = 1 ms or limited by Tj(max) tp ≤ 300 µs; δ ≤ 0.02 Tamb ≤ 25 °C
[1]...
