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PBSS4160PANP - NPN/NPN transistor

Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4160PAN.

PNP/PNP complement: PBSS5160PAP.

Features

  • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS4160PANP
Manufacturer NXP
File Size 383.53 KB
Description NPN/NPN transistor
Datasheet download datasheet PBSS4160PANP Datasheet
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DF N2 020 -6 PBSS4160PANP 14 January 2013 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4.
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