PBSS4032NZ datasheet, transistor equivalent, nexperia

Features and benefits

* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain .

Application

* DC-to-DC conversion
* Battery-driven devices
* Power management
* Charging circuits 1.4 Quick referen.

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ. 1.2 Features and benefits
* Low collector-emitter saturation voltage VCEsat .

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