PBSS4032NX
PBSS4032NX is NPN transistor manufactured by Nexperia.
description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS4032PX.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (h FE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms
IC = 4 A; IB = 400 m A
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 4.7 A
- - 10 A
[1]
- 45 62.5 mΩ
Nexperia
30 V, 4.7 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description emitter collector base
Simplified outline Graphic symbol
1...
