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PBSS4032NZ - 4.9A NPN transistor

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PZ.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • Optimized switching time.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ. 1.2 Features and benefits „ Low collector-emitter saturation voltage VCEsat „ Optimized switching time „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ DC-to-DC conversion „ Battery-driven devices „ Power management „ Charging circuits 1.
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