PBSS4032NX transistor equivalent, 4.7 a npn low vcesat (biss) transistor.
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* Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High .
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* Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PX.
1.2 Features and benefits
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