PBSS303NZ transistor equivalent, 5.5a npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.
* DC-to-DC conversion
* MOSFET gate driving
* Motor control
* Charging circuits
* Power switches (e..
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PZ.
1.2 Features
* Low collector-emitter saturation voltage VCEsat
* High collector .
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