PBSS303ND transistor equivalent, 3a npn transistor.
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to le.
I High-voltage DC-to-DC conversion I High-voltage MOSFET gate driving I High-voltage motor control I High-voltage power .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PD.
1.2 Features
I Low collector-emitter saturation voltage VCEsat I High collector current .
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