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NX3008CBKV - N/P-channel MOSFET

General Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV 3.

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Full PDF Text Transcription (Reference)

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NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET 14 April 2025 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ESD protection up to 2 kV 3. Applications • Level shifter • Power supply converter • Loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.