NX3008NBK
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8
- Typ
- Max 30 8 400
Unit V V m A
Static characteristics RDSon drain-source on-state resistance 1 1.4 Ω
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
30 V, 400 m A N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning...
