NX3008CBKV
description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Level shifter
- Power supply converter
- Load switch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source voltage gate-source voltage drain current drain-source on-state resistance drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 m A; Tj = 25 °C VGS = -4.5 V; ID = -200 m A; Tj = 25 °C
[1]
Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C Tj = 25 °C
[1]
Min -8 -8
- Typ 1
Max -30 8 -220 30 8 400 1.4
Unit V V m A V V m A Ω
TR2 (P-channel)
TR1...
