NGW75T65H3DF igbt equivalent, 75a high speed trench field-stop igbt.
* Collector current (IC) rated at 75 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction .
2. Features and benefits
* Collector current (IC) rated at 75 A
* Low conduction and switching losses
* St.
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losse.
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