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NGW50T65H3DFP Datasheet, nexperia

NGW50T65H3DFP igbt equivalent, 50a high speed trench field-stop igbt.

NGW50T65H3DFP Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 362.61KB)

NGW50T65H3DFP Datasheet
NGW50T65H3DFP Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 362.61KB)

NGW50T65H3DFP Datasheet

Features and benefits


* Collector current (IC) rated at 50 A
* Low conduction and switching losses
* Stable and tight parameters for easy parellel operation
* Maximum junction .

Application

2. Features and benefits
* Collector current (IC) rated at 50 A
* Low conduction and switching losses
* St.

Description

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off loss.

Image gallery

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TAGS

NGW50T65H3DFP
50A
high
speed
trench
field-stop
IGBT
nexperia

Manufacturer


nexperia (https://www.nexperia.com/)

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