NGW50T65H3DFP igbt equivalent, 50a high speed trench field-stop igbt.
* Collector current (IC) rated at 50 A
* Low conduction and switching losses
* Stable and tight parameters for easy parellel operation
* Maximum junction .
2. Features and benefits
* Collector current (IC) rated at 50 A
* Low conduction and switching losses
* St.
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off loss.
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