NGW40T65M3DFP igbt equivalent, 40a trench field-stop igbt.
* Collector current (IC) rated at 40 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction .
and servo motor drive applications.
2. Features and benefits
* Collector current (IC) rated at 40 A
* Low condu.
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off los.
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