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NGW40T65M3DFP Datasheet, nexperia

NGW40T65M3DFP igbt equivalent, 40a trench field-stop igbt.

NGW40T65M3DFP Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 258.70KB)

NGW40T65M3DFP Datasheet

Features and benefits


* Collector current (IC) rated at 40 A
* Low conduction and switching losses
* Stable and tight parameters for easy parallel operation
* Maximum junction .

Application

and servo motor drive applications. 2. Features and benefits
* Collector current (IC) rated at 40 A
* Low condu.

Description

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off los.

Image gallery

NGW40T65M3DFP Page 1 NGW40T65M3DFP Page 2 NGW40T65M3DFP Page 3

TAGS

NGW40T65M3DFP
40A
trench
field-stop
IGBT
nexperia

Manufacturer


nexperia (https://www.nexperia.com/)

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