Datasheet4U Logo Datasheet4U.com

BUK755R4-100E - N-channel MOSFET

General Description

Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Key Features

  • AEC Q101 compliant.
  • Repetitive avalanche rated.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUK755R4-100E N-channel TrenchMOS standard level FET NXP Semiconductors
BUK755R2-40B N-channel TrenchMOS standard level FET NXP Semiconductors
BUK75 (BUK75 / BUK76) TrenchMOS standard level FET NXP
BUK7504-40A N-channel TrenchMOS standard level FET NXP
BUK7504-40A TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
BUK7506-55A N-channel FET
BUK753R1-40E N-channel MOSFET
BUK758R3-40E N-channel MOSFET
BUK72150-55A N-channel TrenchMOS standard level FET
BUK724R5-30C N-channel TrenchMOS standard level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK755R4-100E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.