I Logic-level compatible I Very fast switching I Trench MOSFET technology I ESD protection up to 3 kV 1.3 Applications I Relay driver I High-speed line driver I Low-side.

I Relay driver I High-speed line driver I Low-side loadswitch I Switching circuits 1.4 Quick reference data Table 1. S.

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I Logic-level compatible I Very fast switching I Trench MOSF.

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