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2N7002 - 300mA N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

Features

  • Suitable for logic level gate drive sources.
  • Very fast switching.
  • Surface-mounted package.
  • Trench MOSFET technology 1.3.

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Datasheet Details

Part number 2N7002
Manufacturer Nexperia
File Size 850.86 KB
Description 300mA N-channel MOSFET
Datasheet download datasheet 2N7002 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching  Surface-mounted package  Trench MOSFET technology 1.3 Applications  Logic level translators  High-speed line drivers 1.4 Quick reference data Table 1.
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