NP4P06MR-M mosfet equivalent, 60v p-channel enhancement mode mosfet.
* VDS =-60V,ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
General Features
* VDS =-60V,ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V
* High power .
Schematic diagram
The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications.
General Features
* VDS =-60V,ID =-4A RDS(ON)(Typ..
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