NP40N055NLE Datasheet, Renesas

NP40N055NLE transistor equivalent, mos field effect transistor.

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Features and benefits

* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A.

Application

ORDERING INFORMATION PART NUMBER NP40N055ELE-E1-AY Note1, 2 NP40N055ELE-E2-AY Note1, 2 NP40N055KLE-E1-AY Note1 NP.

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