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NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET

Description

The NP120N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) .

Features

  • VDS =30V，ID =120A RDS(ON)(Typ. )= 2.1mΩ @VGS=10V RDS(ON)(Typ. )= 2.9mΩ @VGS=4.5V.
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • 100% UIS tested Marking and pin assignment.

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Datasheet Details

Part number NP120N03D6
Manufacturer natLinear
File Size 673.28 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP120N03D6 Datasheet
Additional preview pages of the NP120N03D6 datasheet.

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Full PDF Text Transcription

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NP120N03D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) . This device is ideal for high-frequency switching and synchronous rectification. General Features  VDS =30V，ID =120A RDS(ON)(Typ.)= 2.1mΩ @VGS=10V RDS(ON)(Typ.)= 2.9mΩ @VGS=4.
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