NP12N30G
Description
Schematic diagram
The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.
General Features
- VDS =300V，ID =12A
RDS(ON)(Typ.)= 250mΩ @VGS=10V
- High density cell design for ultra low Rdson
Marking and pin assignment
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- Automotive applications
- Hard switched and high frequency circuits
- Uninterruptible power supply
Package
- TO-252-2L
XXXX- Wafer Information YYYY- Quality Code
Ordering Information
Part Number NP12N30G-G
Storage Temperature -55°C to +150°C
Package TO-252-2L
Devices Per Reel 2500
Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter
Drain-source voltage
Gate-source voltage
Continuous Drain Current
TC=25°C TC=100°C
Pulsed Drain Current
Avalanche energy( L=0.5m H)
Maximum power...
