Datasheet4U Logo Datasheet4U.com

NP1804MR - 18V Full-Bridge of MOSFET

Datasheet Summary

Description

The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications.

Features

  • N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested SN SP D2 G2 N-channel P-channel Marking and pin assignment SOT-23-6L (TOP VIEW) D1 SP D2 6 5 4.

📥 Download Datasheet

Datasheet preview – NP1804MR

Datasheet Details

Part number NP1804MR
Manufacturer natLinear
File Size 280.88 KB
Description 18V Full-Bridge of MOSFET
Datasheet download datasheet NP1804MR Datasheet
Additional preview pages of the NP1804MR datasheet.

📁 Similar Datasheet

Other Datasheets by natlinear
  • NP100P02D6 - 20V P-Channel Enhancement Mode MOSFET
  • NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET
  • NP12N04ER - 40V N-Channel Enhancement Mode MOSFET
  • NP12N30G - 300V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
18V Full-Bridge of MOSFET NP1804MR Description Schematic diagram The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a H-Bridge, and for a host of other applications. N-channel P-channel G1 D1 General Features  N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.
Published: |