NP1804MR
Description
Schematic diagram
The NP1804MR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a H-Bridge, and for a host of other applications.
N-channel
P-channel
G1
D1
General Features
- N-channel： VDS =18V,ID =2A RDS(ON)=47mΩ (typical) @ VGS=4.5V RDS(ON)=57mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V,ID =-1.8A RDS(ON)=137mΩ (typical) @ VGS=-4.5V RDS(ON)=182mΩ (typical) @ VGS=-2.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
D2
G2
N-channel
P-channel
Marking and pin assignment
SOT-23-6L (TOP VIEW)
D1 SP D2
Application
- AC half-wave rectifier circuit
NP1804
Package
- SOT-23-6L
HF Pb
G1 SN G2
Ordering Information
Part Number NP1804MR-G
Storage Temperature -55°C to +150°C
Package...
