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4N60AF - N-Channel Power MOSFET

Download the 4N60AF datasheet PDF. This datasheet also covers the 4N60 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.

threshold voltage of 4 volts.

Features

  • RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max. ) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB (4N60A) GDS TO-220F (4N60AF).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (4N60-nELL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
4N60A Power MOSFET GOFORD
4N60AS N-Channel MOSFET INCHANGE
4N60 4A 600V N-channel Enhancement Mode Power MOSFET ROUM
4N60 Power MOSFET Zibo Seno
4N60 N-CHANNEL MOSFET KIA

Other Datasheets by Nell Power Semiconductor

Part Number Description
4N60A N-Channel Power MOSFET
4N60 N-Channel Power MOSFET
4N60F N-Channel Power MOSFET
4N60G N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.
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