CSD25483F4T datasheet, mosfet equivalent, Texas Instruments

Features and benefits

*1 Ultra-Low On-Resistance
* Ultra-Low Qg and Qgd
* High Operating Drain Current
* Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 m.

Application

* Optimized for load Switch Applications
* Optimized for General Purpose Switching Applications
* Battery Ap.

Description

This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction .

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