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CSD25484F4 Datasheet P-Channel Power MOSFET

Manufacturer: Texas Instruments

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General Description

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 1090 150 VGS = –1.8 V 405 VGS = –2.5 V 150 VGS = –4.5 V 93 VGS = –8.0 V 80 –0.95 UNIT V pC pC mΩ V DEVICE CSD25484F4 CSD25484F4T Device Information(1) QTY MEDIA PACKAGE 3000 7-Inch Reel 250 Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25484F4 SLPS551A – MAY 2015 – REVISED AUGUST 2017 CSD25484F4 –20-V P-Channel FemtoFET™ MOSFET.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Low-Threshold Voltage.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.2-mm Height.
  • Integrated ESD Protection Diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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