CSD25483F4 Datasheet | Texas Instruments

Features - 1 Ultra-Low On-Resistance - Ultra-Low Qg and Qgd - High Operating Drain Current - Ultra-Small Footprint (0402 Case Size) - 1.0 mm × 0.6 mm - Ultra-Low Profile - 0.35 mm Max Height - Integrated ESD Protection Diode - Rated >4 k V HBM - Rated >2 k V CDM - Lead and Halogen Free - Ro HS pliant 2 Applications - Optimized for load Switch Applications - Optimized for General Purpose Switching Applications - Battery Applications - Handheld and Mobile Applications 3 Description This 210 mΩ, 20 V P-Channel Femto FET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . Typical Part Dimensions 0.35 mm Product Summary TA = 25°C Drain-to-Source Voltage Qg Gate Charge Total (- 4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE - 20 959 161 VGS = - 1.8 V 530 VGS = - 2.5 V 338 VGS = - 4.5 V...