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CSD25480F3 - P-Channel Power MOSFET

Description

This

20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Ultra-Small Footprint.
  • 0.73 mm × 0.64 mm.
  • Low Profile.
  • 0.35-mm Max Height.
  • Integrated ESD Protection Diode.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25480F3 SLPS578A – APRIL 2016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
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