Datasheet4U Logo Datasheet4U.com

CSD23381F4 Datasheet P-Channel Power MOSFET

Manufacturer: Texas Instruments

📥 Download Datasheet

General Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage –12 Qg Gate Charge Total (–4.5 V) 1140 UNIT V pC Product Summary (continued) TA = 25°C TYPICAL VALUE Qgd Gate Charge Gate-to-Drain 190 RDS(on) Drain-to-Source OnResistance VGS = –1.8 V 480 VGS = –2.5 V 250 VGS = –4.5 V 150 VGS(th) Threshold Voltage –0.95 UNIT pC mΩ mΩ mΩ V Device(1) CSD23381F4 CSD23381F4T Ordering Information Qty Media Package 3000 250 7-Inch Reel Femto(0402) 1.0 mm x 0.6 mm Land Grid Array (LGA) Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

CSD23381F4 SLPS450E – OCTOBER 2013 – REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET™ MOSFET.

Key Features

  • Ultra-Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

More Datasheets from Texas Instruments

Part Number Description
CSD23381F4T P-Channel Power MOSFET
CSD23382F4 P-Channel Power MOSFET
CSD23382F4T P-Channel Power MOSFET
CSD23201W10 P-Channel Power MOSFET
CSD23202W10 P-Channel Power MOSFET
CSD23202W10T P-Channel Power MOSFET
CSD23203W P-Channel Power MOSFET
CSD23203WT P-Channel Power MOSFET
CSD23280F3 P-Channel Power MOSFET
CSD23280F3T P-Channel Power MOSFET