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CSD23382F4 - P-Channel Power MOSFET

Description

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >2 kV HBM.
  • Rated >2 kV CDM.
  • Pb Terminal Plating.
  • Halogen Free.
  • RoHS Compliant 2.

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Full PDF Text Transcription

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23382F4 SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F4 12 V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM • Pb Terminal Plating • Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
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