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CSD23381F4T - P-Channel Power MOSFET

Download the CSD23381F4T datasheet PDF. This datasheet also covers the CSD23381F4 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Ultra-Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD23381F4-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
CSD23381F4 P-Channel Power MOSFET
CSD23382F4 P-Channel Power MOSFET
CSD23382F4T P-Channel Power MOSFET
CSD23201W10 P-Channel Power MOSFET
CSD23202W10 P-Channel Power MOSFET

Full PDF Text Transcription

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CSD23381F4 SLPS450E – OCTOBER 2013 – REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-Low On-Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
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