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CSD23203W - P-Channel Power MOSFET

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CSD23203W Product details

Description

This 16.2-mΩ, 8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. 4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Voltage Threshold TYPICAL VALUE 8 4.9 0.6 VGS = 1.8 V VGS =

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