CSD17483F4 datasheet, mosfet equivalent, Texas Instruments

Features and benefits

*1 Low On-Resistance
* Low Qg and Qgd
* Low-Threshold Voltage
* Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
* Ultra-Low P.

Application

* Optimized for Load Switch Applications
* Optimized for General Purpose Switching Applications
* Single-Cel.

Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60%.

Image gallery