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CSD17484F4 Datasheet N-Channel MOSFET

Manufacturer: Texas Instruments

Overview: CSD17484F4 SLPS550D – MAY 2015 – REVISED FEBRUARY 2022 CSD17484F4 30-V N-Channel FemtoFET™ MOSFET.

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General Description

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

0.20 mm Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 30 Qg Gate Charge Total (4.5 V) 920 Qgd Gate Charge Gate-to-Drain 75 VGS = 1.8 V 170 RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V VGS = 4.5 V 125 107 VGS = 8.0 V 99 VGS(th) Threshold Voltage 0.85 DEVICE Device Information(1) QTY MEDIA PACKAGE CSD17484F4 CSD17484F4T 3000 250 7-Inch Reel Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) UNIT V pC pC mΩ V SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Key Features

  • Low on-resistance.
  • Ultra-low Qg and Qgd.
  • Low-threshold voltage.
  • Ultra-small footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-low profile.
  • 0.2-mm height.
  • Integrated ESD protection diode.
  • Rated > 4-kV HBM.
  • Rated > 2-kV CDM.
  • Lead and halogen free.
  • RoHS compliant 2.

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