Overview
This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. 0.20 mm Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 30 Qg Gate Charge Total (4.5 V) 920 Qgd Gate Charge Gate-to-Drain 75 VGS = 1.8 V 170 RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V VGS = 4.5 V 125 107 VGS = 8.0 V 99 VGS(th) Threshold Voltage 0.85 DEVICE Device Information(1) QTY MEDIA PACKAGE CSD17484F4 CSD17484F4T 3000 250 7-Inch Reel Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) UNIT V pC pC mΩ V SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
- Low on-resistance
- Ultra-low Qg and Qgd
- Low-threshold voltage
- Ultra-small footprint (0402 Case Size) - 1.0 mm × 0.6 mm
- Ultra-low profile - 0.2-mm height
- Integrated ESD protection diode - Rated > 4-kV HBM - Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
