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CSD17306Q5A - N-Channel MOSFET

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultralow Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD17306Q5A www.ti.com SLPS253A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17306Q5A RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage - V FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Notebook Point of Load • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
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