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CJ2101
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 3. DRAIN
APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc
MARKING: TS1 Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tp=10µs) Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM PD RθJA TJ Tstg
Value
- 20 ±8.0 -1.4 -3.0 0.29 431 150 -50 ~+150
Unit V
A W ℃/W ℃
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CJ2101 Datasheet
