z High Collector Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to.
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CJ201NL SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT–23 FEATURES z High Collector Current Capability z Low Collector-emitter Saturation Voltage z H...
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ctor Current Capability z Low Collector-emitter Saturation Voltage z High Efficiency Leading to Less Heat Generation z Reduced PCB Requirements z Alternatived Effectively to MOSFETS in Specific Applications APPLICATIONS z Power Management z Peripheral Driver MARKING: 201N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5V IC Collector Current 1A PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150
CJ201NL Datasheet
