Full PDF Text Transcription for CJ2102 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CJ2102. For precise diagrams, tables, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2102 N-Channel 20-V(D-S) MOSFET FEATURE z TrenchFET Power MOSFET APPLICATIONS z L...
View more extracted text
nel 20-V(D-S) MOSFET FEATURE z TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: TS2 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature Symbol VDS VGS ID IS PD RθJA TJ TSTG SOT-323 1. GATE 2. SOURCE 3. DRAIN Value 20 ±8 2.1 0.6 0.
CJ2102 Datasheet
