WSGPA01 amplifier equivalent, gan on sic general purpose power amplifier.
* GaN on SiC HEMT technology
* Operating frequency : up to 5 GHz
* P3dB : up to 10 W
* Supply voltage : up to 50 V
* Maximum junction temperature : 22.
up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm .
The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is des.
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