CMPA801B025D amplifier equivalent, power amplifier.
* 28 dB Small Signal Gain
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35 W Typical PSAT Operation up to 28 V
* High Breakdown Voltage
* High Temperature Operation
* Size 0.142 x 0..
* Point to Point Radio
* Communications
* Test Instrumentation
* EMC Amplifiers
Rev 2.2
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Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, high.
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