CMPA801B025D
Description
Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
Key Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.142 x 0.188 x 0.004 inches
