Datasheet Details
| Part number | CMPA801B025D |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 348.74 KB |
| Description | Power Amplifier |
| Datasheet |
 CMPA801B025D Datasheet
|
|
|
| Part number | CMPA801B025D |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 348.74 KB |
| Description | Power Amplifier |
| Datasheet |
CMPA801B025D Datasheet
|
|
|
|
Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.
CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CMPA801B025 | Power Amplifier | CREE |
| Part Number | Description |
|---|---|
| CMPA801B025 | Power Amplifier |
| CMPA801B030D | Power Amplifier |
| CMPA801B030F | Power Amplifier |
| CMPA801B030F1 | Power Amplifier |
| CMPA801B030S | GaN MMIC Power Amplifier |
| CMPA0060002D | GaN HEMT MMIC Power Amplifier |
| CMPA0060002F | GaN MMIC Power Amplifier |
| CMPA0060025F | GaN MMIC Power Amplifier |
| CMPA0530002S | GaN MMIC |
| CMPA0560008S | 10W GaN HPA |