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CMPA801B025
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
Description
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
PNs: CMPA801B025F and CMPA801B025P Package Types: 440213 and 440216
Typical Performance Over 8.5 - 11.
CMPA801B025 Datasheet
