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CMPA801B025
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-
PN: CMPaPcAk8a0g1eBT0y2p5eF:/4C4M02P1A38/014B40022156P
factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Typical Performance Over 8.5-11.0 GHz (TC = 25˚C)
Parameter
8.5 GHz
10.
CMPA801B025 Datasheet
