WFW24N50W mosfet equivalent, silicon n-channel mosfet.
* 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
* Ultra-low Gate charge(Typical 90nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tempe.
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switchin.
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