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WFW20N60W - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerC

Key Features

  • 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFW20N60W
Manufacturer Winsemi
File Size 340.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFW20N60W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr W20N60W WF WFW Silicon N-Channel MOSFET Features � � � � � 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .