WFW13N50 mosfet equivalent, silicon n-channel mosfet.
* 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
* Ultra-low Gate charge(Typical 43nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.
This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited.
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