WFU7N65S mosfet equivalent, power mosfet.
� Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant
General Description
Power MOSFET is fabricated using advanced super junction.
which require superior power density and outstanding efficiency.
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VD.
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
D
G S
Absolut.
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