WFP540 mosfet equivalent, silicon n-channel mosfet.
□ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V
□ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Voltage (VISO=4000V AC) □ Maxim.
This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well s.
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