WFP50N06 mosfet equivalent, silicon n-channel mosfet.
* RDS(on)(Max 22mΩ)@VGS=10V
* Ultra-low Gate Charge(Typical 31nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temperature Ra.
in switching regulators , switching convertors, motor and relay drivers ,and drivers for high power bipolar switching tr.
This Power MOSFET is produced using Winsemi's trench Layout -based process .This technology mproves the performances Compared with standard parts form various sources.All of these power MOSFETs are designed for applications in switching regulators , .
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