z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applicat.

Standard Product WNM3011 is Pb-free. SOT-23-6L DDS 65 4 123 DDG Configuration (Top View) Features z Trench Technology.

The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Stand.

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