* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* HBM ESD protection >2 kV
* Small package SOT-3.

* Driver: Relay, Solenoid, Lamps,Hammers etc.
* Power supply converters circuit
* Load/Power Switching for p.

The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3018 is Pb-f.

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