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WNM3018 Datasheet MOSFET

Manufacturer: WillSEMI

Datasheet Details

Part number WNM3018
Manufacturer WillSEMI
File Size 681.97 KB
Description MOSFET
Datasheet download datasheet WNM3018 Datasheet

General Description

s The WNM3018 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in small signal switch.

Overview

WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • HBM ESD protection >2 kV.
  • Small package SOT-323.