WNM3003 mosfet equivalent, n-channel mosfet.
z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 WT3 * = Dev.
Standard Product WNM3003 is Pb-free.
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Features
z z z z z Trench Technology Supper high densit.
The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge. This device is suitable for use in DC-DC conversion and power switch appl.
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